Single-Atom Transistor Discovered

a) Colored scanning electron microscope image of the measured device. Aluminum top gate is used to induce a two-dimensional electron layer at the silicon-silicon oxide interface below the metallization. The barrier gate is partially below the top gate and depletes the electron layer in the vicinity of the phosphorus donors (the red spheres added to the original image). The barrier gate can also be used to control the conductivity of the device. All the barrier gates in the figure form their own individual transistors. (b) Measured differential conductance through the device at 4 Tesla magnetic field. The red and the yellow spheres illustrate the spin-down and -up states of a donor electron which induce the lines of high conductivity clearly visible in the figure. (Credit: American Chemical Society)

From Science Daily:

Science Daily (Dec. 7, 2009) — Researchers from Helsinki University of Technology (Finland), University of New South Wales (Australia), and University of Melbourne (Australia) have succeeded in building a working transistor, whose active region composes only of a single phosphorus atom in silicon.

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